Catalogue 2014 - 2015

EE 431 Semiconductor Device Modeling for VLSI

Credits

3 cr.

Prerequisite

EE 312 or equivalent.

Course Description

This course will describe the operation and characteristics of high speed devices: submicron silicon MOSFETS and Silicon Bipolar Transistors for high frequency and VLSI applications. It will also cover the basics of MESFETS and some high speed devices using compound semiconductors (HEMTs and HBTs).